Chinese translation for "c-v characteristic"
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- 伏安特性
Related Translations:
- Example Sentences:
| 1. | In the experiment of photo - excited c - v characteristics of sio2 / n - sic , a ledge that had been appeared in p - type sample was observed because of the deep interface states
然后使用光照条件讨论了p和n型sicmos的界面态的性质，即p型为施主态， n型为受主态。 | | 2. | The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion . 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting
6文章还对立方氨化硼薄膜的成核和生长机理，氮化硼薄膜的n型掺杂机制和bn型）侣i …型）异质结的电流输运机制进行了探讨。 | | 3. | It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling . the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad
当氧化层中存在较强电场时，电离辐照对s汇mos电容的影响会更明显， sicmos器件比st器件具有更好的抗y辐照的能力。 | | 4. | A model of the interface state density distribution near by valence band is presented , and the dependence of the threshold voltage on temperature , the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics , transfer characteristics and effective mobility of sic pmosfets are analyzed . thirdly , the output characteristics and the drain breakdown characteristics are modeled with the procedure medici . the output characteristics in the room temperature and 300 ? are simulated , and the effects of gate voltage . contact resistance , interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一个价带附近的界面态分布模型，用该模型较好地描述了sicpmos器件阈值电压随温度的变化关系、 c - v特性曲线以及亚阈特性曲线；分析了源漏寄生电阻对sicpmos器件输出特性、转移特性以及有效迁移率的影响；论文中用模拟软件medici模拟了sicpmos器件的输出特性和漏击穿特性，分别模拟了室温下和300时sicpmos器件的输出特性，分析了栅电压、接触电阻、界面态以及其他因素对sicpmos击穿特性的影响。 | | 5. | In this paper , the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials . the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
本文就sio _ 2 / sic界面质量对n沟sicmosfet性能的影响做了深入的研究：从碳化硅材料的晶体结构出发分析了碳化硅材料中杂质的不完全离化，采用sicmos反型层薄层电荷数值模型，研究了杂质不完全离化对p型6h - sicmosc - v特性的影响。 |
- Similar Words：
- "c-type spot welding head" Chinese translation, "c-type steel" Chinese translation, "c-type steels" Chinese translation, "c-type viral herangina" Chinese translation, "c-type virus" Chinese translation, "c-v-dna" Chinese translation, "c-value" Chinese translation, "c-value enigma" Chinese translation, "c-virus" Chinese translation, "c-vldl" Chinese translation
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